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Among all the emerging memories, Spin-Transfer Torque Random Access Memory (STT-RAM) has demonstrated many promising features such as fast access speed, nonvolatility, excellent scalability, and compatibility to CMOS process. However, the large process variations of both magnetic tunneling junction (MTJ) and MOS transistors in the scaled technologies severely limit the yield of STT-RAM chips. In this...
We proposed a novel self-reference sensing scheme for Spin-Transfer Torque Random Access Memory (STT-RAM) to overcome the large bit-to-bit variation of Magnetic Tunneling Junction (MTJ) resistance. Different from all the existing schemes, our solution is nondestructive: The stored value in the STT-RAM cell does NOT need to be overwritten by a reference value. And hence, long write-back operation (of...
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