The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave performance to 0.5- mum emitter devices.
We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/mum2 is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.