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ESD tests have been performed on RF MEMS capacitive switches in different ambient pressure and environmental conditions. This is done using an integrated measurement setup which can measure out-of-plane displacement as well as current and voltage in the MEMS during an HBM ESD stress event. The effect of ESD on the switch characteristics is investigated.
This paper discusses dielectric charging in electrostatic RF-MEMS switches. We show that more than one charging mechanism can be present and impacts their lifetime. These different mechanisms can cancel, mitigate or enhance each otherpsilas influence on the lifetime, depending on the materials used and on the test conditions. Contrarily to the common understanding of the dielectric charging, we show...
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