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Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the LTCC substrates has been carried out by aluminum oxide buffering layers on the LTCC surface. Further depositions have been performed in an epitaxial reactor...
Deposition of InAlN on commercially purchased SiC/(111) Si wafers has been performed in a temperature range of 530°C to 420°C using an alternating precursor MOCVD growth technique. The effect of an InN buffering layer between the substrate and the InAlN layer was explored. Varying the ratio between the InN and AlN in InAlN was also explored. Peak shifting to higher angles was observed in the InN interlayer...
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