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Utilizing the demonstrated capability of nonlinear programming algorithms, a practical design optimization approach for power converters is established to conceive a design to meet all power-circuit performance requirements and concurrently optimize a defined quantity such as weight or losses. In addition to facilitate a cost-effective design, the computer-aided approach provides a means to readily...
The emitter shunting resistance can be used as an independent input in determining the switching characteristics of thyristors, especially fast switching thyristors. A smaller shunt resistance leads to a higher dv/dt capability and a higher gate triggering current. Trade-off relations given in this paper indicate that the device's dv/dt capability and hence the turn-off time can be optimized by sacrificing...
A model of base widening and the associated inverse mode base conductivity modulation is proposed. Expressions are obtained for saturated current gain (hFE) and cutoff frequency (fT) in double-diffused transistors for exponential, Gaussian, and erfc base impurity profiles. A convenient method for calculation of optimum transistor design variables is also given.
It is proposed that the limit of thermal instability replace the traditional limit of second breakdown for the safe-operating-area limits of power transistors. A nondestructive method for measuring the limit of thermal instability is described. The relationships between thermal instability, stable hot spots, and second breakdown are reviewed and it is shown that stable hotspot operating conditions...
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