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Effect of ozone (O 3 ) concentration (90, 300g/Nm 3 ) on atomic layer deposition of HfO 2 thin films on GaAs wafers using tetrakis (dimethylamino)hafnium (TDMAHf) as Hf precursor was systematically studied including MISCAP performance and related microstructure. High-resolution transmission electron microscopy analyses show that oxidation of the GaAs substrate enhances with...
Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
A theoretical approach combining rate equations with Coulomb scattering rates in InAs/GaAs quantum dot lasers is presented. We find strong damping of relaxation oscillations, and show the crucial importance of Coulomb interaction for this characteristic
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